IEEE Transactions on Power Electronics · 2004 · 28 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice SimulationDynamic SimulationIntegrated Circuit DesignSimulation ModelingBipolar Junction Transistor ModelingBipolar Junction Transistor SimulationCircuit SimulationField-effect Transistor SimulationMosfet ModelingParameter ExtractionPower Device SimulationSmall-signal Parameter Extraction
We propose a new extraction algorithm for the parameters of an insulated gate bipolar transistor dynamic behavioral model. The algorithm relies on the availability of experimental data from the manufacturers and uses Matlab optimization toolbox to extract the parameters automatically. The theoretical predictions of the algorithm are compared with both the experimental and the simulation data that use alternative extraction methods and are found to be in excellent agreement.
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