An analytical model for the steady-state and transient characteristics of the power insulated-gate bipolar transistor

On the Variation of Junction-Transistor Current-Amplification Factor with Emitter Current

W. Webster · Proceedings of the IRE · 1954 · 269 citations

Device Modeling, Electrical Engineering, Engineering +10

The Transport of Added Current Carriers in a Homogeneous Semiconductor

W. van Roosbroeck · Physical Review · 1953 · 259 citations

Engineering, Semiconductor Physics, Charge Transport +16

The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device

B. Jayant Baliga, M.S. Adler, R.P. Love et al. · IEEE Transactions on Electron Devices · 1984 · 238 citations

Low-power Electronics, High-power Electronics, Electrical Engineering +13

The COMFET—A new high conductance MOS-gated device

John P. Russell, Alvin M. Goodman, L.A. Goodman et al. · IEEE Electron Device Letters · 1983 · 201 citations

Semiconductors, N-channel Power Mosfet, Electrical Engineering +11

A Performance Trade-Off for the Insulated Gate Bipolar Transistor: Buffer Layer Versus Base Lifetime Reduction

Allen R. Hefner, David L. Blackburn · IEEE Transactions on Power Electronics · 1987 · 56 citations

Device Modeling, Electrical Engineering, Semiconductor Device +13