Behavioral modeling of the IGBT using the Hammerstein configuration

Abstract

The Hammerstein model configuration, which includes a nonlinear static block followed by a linear dynamic block, is applied to model the static and dynamic characteristics of the insulated gate bipolar transistor (IGBT). Using least-squares methods, the parameters in the behavioral model can be extracted from the electrical measurements of physical devices or from the circuit simulations of physics-based models. A single set of extracted parameters has been found to yield satisfactory efficiency and accuracy for the tested hard- and soft-switched converters under prescribed ranges of operating conditions.