G.A. Franz

Finite boxes—A generalization of the finite-difference method suitable for semiconductor device simulation

A. Franz, G.A. Franz, S. Selberherr et al. · IEEE Transactions on Electron Devices · 1983 · 95 citations

An accurate model for power DMOSFETs including interelectrode capacitances

R.S. Scott, G.A. Franz, Joy L. Johnson · IEEE Transactions on Power Electronics · 1991 · 65 citations

Device Modeling, Low-power Electronics, Electrical Engineering +14

BAMBI -- A Design Model for Power MOSFET's

A. Franz, G.A. Franz · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 1985 · 39 citations

Device Modeling, Electrical Engineering, Power Mosfet +12

Performance of low loss synchronous rectifiers in a series-parallel resonant DC-DC converter

R.A. Fisher, C.S. Korman, G.A. Franz et al. · 2003 · 33 citations

Electrical Engineering, Series-parallel Converter Circuit, Engineering +11

Measurement and analysis of hot-carrier-stress effect on NMOSFET's using substrate current characterization

Y. Nissan‐Cohen, G.A. Franz, Robert Kwasnick · IEEE Electron Device Letters · 1986 · 29 citations

Device Modeling, Electrical Engineering, Engineering +14