R.P. Love

The insulated gate transistor: A new three-terminal MOS-controlled bipolar power device

B. Jayant Baliga, M.S. Adler, R.P. Love et al. · IEEE Transactions on Electron Devices · 1984 · 238 citations

Low-power Electronics, High-power Electronics, Electrical Engineering +13

The insulated gate rectifier (IGR): A new power switching device

B. Jayant Baliga, M.S. Adler, P. Gray et al. · 1982 · 199 citations

Electrical Engineering, Engineering, Insulated Gate Rectifier +12

Localized lifetime control in insulated-gate transistors by proton implantation

A. Mogro-, R.P. Love, Mau-Chung Frank Chang et al. · IEEE Transactions on Electron Devices · 1986 · 70 citations

Device Modeling, Low-power Electronics, Electrical Engineering +14

Suppressing latchup in insulated gate transistors

B. Jayant Baliga, M.S. Adler, P. Gray et al. · IEEE Electron Device Letters · 1984 · 52 citations

Semiconductors, Device Modeling, Electrical Engineering +13

Drastic Changes in the Electrical Resistance of Gold‐Doped Silicon Produced by a Hydrogen Plasma

A. Mogro‐Campero, R.P. Love, Rudolf Schubert · Journal of The Electrochemical Society · 1985 · 44 citations

Electrical Resistance, Engineering, Drastic Changes +18