Advanced Resist Design Using AFM Analysis for ArF Lithography

Abstract

We found that the line edge roughness (LER) of resist pattern could be improved by improving the uniformity of the polymer itself, the main component of the photoresist, at stage of the polymerization. Also, we found that, by using the atomic force microscope (AFM), the aspect of the polymer aggregates had difference when we quantitatively comparison-measured photoresist surface, which was in process of dissolution. We believe that this difference is due to the individual aggregate dissolution property toward the developer. In this paper, we are focusing on the dissolution property of polymers toward developer, and discussing on the uniformity of the polymer and the correlation to the LER.