IEEE Instrumentation & Measurement Magazine · 2011 · 37 citations · 22 references
Device ModelingLow-power ElectronicsElectrical EngineeringNano-scale DimensionsEngineeringNanoelectronicsElectronic EngineeringMixed-signal Integrated CircuitApplied PhysicsBias Temperature InstabilityComputer EngineeringNoiseAdvanced Cmos TransistorsDeep SubmicronMicroelectronicsChannel Length
This paper is a review of 1/f noise in state-of-the-art advanced MOSFETs, where the channel length has deep submicron or nano-scale dimensions. The origin of 1/f noise, models of 1/f noise, and ways of measuring 1/f noise are briefly reviewed.
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