S. Chaudhry - Concepedia

Author

S. Chaudhry

Arizona State University

Also Known As

J. Ning, S. Chaudhry, Samir Chaudhry

Publications

398

Citations

H-Index

Concepts

All Affiliations

Arizona State University Philips (Netherlands)American Sentinel University NXP (Netherlands)Analog Devices (United States)

About

S. Chaudhry is an author at Arizona State University specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	12	301
2	Electrical Engineering	11	11	289
3	Applied Physics	7	7	204
4	Computer Engineering	6	6	134
5	Materials Science	1	1	32

S. Chaudhry

Publications

322

Citations

H-Index

Page 1

	Year	Citations
Statistical Modeling With the PSP MOSFET Model Xin Li, Colin C. McAndrew, Weimin Wu, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems Device ModelingOscillator Gate DelaysElectrical EngineeringEngineeringBias Temperature Instability	2010	44
Benchmark Tests for MOSFET Compact Models With Application to the PSP Model Xin Li, Weimin Wu, Amit Jha, IEEE Transactions on Electron Devices EngineeringVlsi DesignPower ElectronicsPsp ModelCircuit System	2009	38
1/f noise in advanced CMOS transistors Yael Nemirovsky, Dan Corcos, Igor Brouk, IEEE Instrumentation & Measurement Magazine Device ModelingLow-power ElectronicsElectrical EngineeringNano-scale DimensionsEngineering	2011	37
Dopant dose loss at the Si–SiO2 interface H.-H. Vuong, C.S. Rafferty, S. A. Eshraghi, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena SemiconductorsSemiconductor TechnologyElectrical EngineeringEngineeringPhysics	2000	36
The stress assisted evolution of point and extended defects in silicon S. Chaudhry, Mark E. Law Journal of Applied Physics EngineeringSilicon On InsulatorDefect ToleranceSemiconductorsSemiconductor Devices	1997	32
A millimeter-wave capable SiGe BiCMOS process with 270GHz FMAX HBTs designed for high volume manufacturing Edward Preisler, George Talor, David Howard, Electrical EngineeringHbt DevicesEngineeringHigh-speed ElectronicsPhysics	2011	29
Benchmarking the PSP Compact Model for MOS Transistors Xin Li, Weimin Wu, Amit Jha, EngineeringVlsi DesignPsp Compact ModelPower ElectronicsPsp Model	2007	19
Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications S.D. Phillips, Edward Preisler, Jie Zheng, Process EnhancementsElectrical EngineeringTower SemiconductorEngineeringRf Semiconductor	2021	16
The effect of triple well implant dose on performance of NMOS transistors K.K. Bourdelle, S. Chaudhry, J. Chu IEEE Transactions on Electron Devices Electrical EngineeringEngineeringHigh Energy ImplantPhysicsTriple Well	2002	14
A 50-GHz 0.25-μm implanted-base high-energy implanted-collector complementary modular BiCMOS (HEICBiC) technology for low-power wireless communication VLSIs Yih-Feng Chyan, Michael S. Carroll, Ts. Ivanov, Low-power ElectronicsWireless CommunicationsElectrical EngineeringEngineeringVlsi Design	2002	13

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