Statistical Modeling With the PSP MOSFET Model

Abstract

<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> PSP and the backward propagation of variance (BPV) method are used to characterize the statistical variations of metal-oxide-semiconductor field effect transistors (MOSFETs). BPV statistical modeling of NMOS and PMOS devices is, for the first time, coupled by including self-consistent modeling of ring oscillator gate delays. Parasitic capacitances are included in the analysis. The proposed technique is validated using Monte-Carlo simulations and by comparison to experimental data from two technologies. </para>