2011 · 19 citations · 2 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignEmbedded Memory BlocksIntegrated Circuit DesignMemory Hierarchy DesignMemory Subsystem DesignVery-large-scale Integration Layout3D Stacked MemoryHigh PerformanceMetal GatesThree-dimensional Integrated Circuit InterconnectsThree-dimensional IntegrationThrough-silicon Via DesignThrough-silicon Vias
For the first time we report a high performance embedded DRAM prototype fabricated in a 3D stackable 32nm High-K/Metal Gate technology with copper through-silicon vias. Post through-via processing functional test demonstrates that <1.5ns latency and 500MHz operation are preserved.
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