John Golz

A 500 MHz Random Cycle, 1.5 ns Latency, SOI Embedded DRAM Macro Featuring a Three-Transistor Micro Sense Amplifier

J. Barth, W. Reohr, P. Parries et al. · IEEE Journal of Solid-State Circuits · 2008 · 60 citations

Engineering, Computer Engineering, Electrical Engineering +17

An 800-MHz embedded DRAM with a concurrent refresh mode

T. Kirihata, P. Parries, David R. Hanson et al. · IEEE Journal of Solid-State Circuits · 2005 · 50 citations

Engineering, Computer Engineering, Computer Science +17

A 500MHz Random Cycle 1.5ns-Latency, SOI Embedded DRAM Macro Featuring a 3T Micro Sense Amplifier

J. Barth, W. Reohr, P. Parries et al. · 2007 · 35 citations

Engineering, Computer Engineering, Electrical Engineering +14

Gas jet deposition of thin films

B.L. Halpern, J.J. Schmitt, John Golz et al. · Applied Surface Science · 1991 · 27 citations

Natural Sciences, Materials Engineering, Materials Science +8

High-quality MNS capacitors prepared by jet vapor deposition at room temperature

D. Wang, T.P. Ma, John Golz et al. · IEEE Electron Device Letters · 1992 · 27 citations

Engineering, Materials Engineering, Materials Science +17