IEEE Electron Device Letters · 1995 · 107 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationIii-v SemiconductorsSemiconductor Device MaterialsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsBreakdown VoltageCurrent DensityHigh-voltage BreakdownSchottky Barrier CharacteristicsSchottky Barrier DiodesSchottky BarriersSilicon Carbide (Sic) MaterialsTemperature Dependence Of Diodes
Characteristics of 4H-SiC Schottky barrier diodes with breakdown voltages up to 1000 V are reported for the first time. The diodes showed excellent forward I-V characteristics, with a forward voltage drop of 1.06 V at an on-state current density of 100 A/cm/sup 2/. The specific on-resistance for these diodes was found to be low (2/spl times/10/sup -3/ /spl Omega/-cm/sup 2/ at room temperature) and showed a T/sup 1.6/ variation with temperature. Titanium Schottky barrier height was determined to be 0.99 eV independent of the temperature. The breakdown voltage of the diodes was found to decrease with temperature.
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Schottky barrier diodes on 3C-SiC
S. Yoshida, Katsuhiro Sasaki, E. Sakuma et al. · Applied Physics Letters · 1985 · 108 citations