D. Alok

Effect of interface states on electron transport in 4H-SiC inversion layers

E. Arnold, D. Alok · IEEE Transactions on Electron Devices · 2001 · 120 citations

Engineering, 4H-sic Inversion Layers, Charge Transport +16

High voltage 4H-SiC Schottky barrier diodes

R. Raghunathan, D. Alok, B. Jayant Baliga · IEEE Electron Device Letters · 1995 · 107 citations

Materials Engineering, Electrical Engineering, Engineering +11

A simple edge termination for silicon carbide devices with nearly ideal breakdown voltage

D. Alok, B. Jayant Baliga, P.K. McLarty · IEEE Electron Device Letters · 1994 · 90 citations

Semiconductor Technology, Electrical Engineering, Semiconductor Device +13

SiC device edge termination using finite area argon implantation

D. Alok, B. Jayant Baliga · IEEE Transactions on Electron Devices · 1997 · 67 citations

Electrical Engineering, Argon Ion-implantation, Engineering +11

Electrical properties of thermal oxide grown on <i>n</i>-type 6<i>H</i>-silicon carbide

D. Alok, P.K. McLarty, B. Jayant Baliga · Applied Physics Letters · 1994 · 52 citations

Engineering, Breakdown Field Strength, Electrical Properties +20