IEEE Transactions on Electron Devices · 1997 · 67 citations · 6 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice ModelingIntegrated Circuit DesignIon ImplantationSemiconductor Device MaterialsWide Band Gap SemiconductorsAmorphizationBreakdown VoltageIon Implantation EffectsJunction BreakdownReverse Bias CharacteristicsSchottky Barrier DiodesSilicon CarbideSilicon Carbide (Sic) Materials
In this paper, the results obtained with limited area amorphization by argon ion-implantation at the periphery of 6H-SiC Schottky barrier diodes are reported. It is demonstrated that only 50 /spl mu/m of implant region is required at the periphery to obtain ideal plane parallel breakdown voltages. The leakage current at small reverse bias voltages was found to be directly proportional to the implant area.
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Edge terminations for SiC high voltage Schottky rectifiers
M. Bhatnagar, H. Nakanishi, Shilpa Bothra et al. · 2002 · 42 citations