E. Arnold

Realization of high breakdown voltage (<700 V) in thin SOI devices

S. Merchant, E. Arnold, Helmut Baumgart et al. · 2002 · 198 citations

Engineering, Electrical Engineering, Materials Science +17

Faceting at the silicon (100) crystal-melt interface: Theory and experiment

Uzi Landman, W. D. Luedtke, R. N. Barnett et al. · Physical Review Letters · 1986 · 152 citations

Natural Sciences, Materials Science, Physics +15

Effect of interface states on electron transport in 4H-SiC inversion layers

E. Arnold, D. Alok · IEEE Transactions on Electron Devices · 2001 · 120 citations

Engineering, Electrical Engineering, Physics +17

Disorder-induced carrier localization in silicon surface inversion layers

E. Arnold · Applied Physics Letters · 1974 · 98 citations

Engineering, Materials Science, Physics +17

Silicon‐on‐lnsulator Devices for High Voltage and Power IC Applications

E. Arnold · Journal of The Electrochemical Society · 1994 · 79 citations

Engineering, Electrical Engineering, Materials Science +17