S. Merchant

Realization of high breakdown voltage (<700 V) in thin SOI devices

S. Merchant, E. Arnold, Helmut Baumgart et al. · 2002 · 198 citations

Electrical Engineering, Semiconductor Device, Engineering +14

Dependence of breakdown voltage on drift length and buried oxide thickness in SOI RESURF LDMOS transistors

S. Merchant, E. Arnold, Helmut Baumgart et al. · 2002 · 76 citations

Electrical Engineering, Semiconductor Device, Engineering +12

Isotropic magnetic exchange in magnesium dichloride dihydrate, MnCl2.2H2O, a chemical linear chain

J. N. McElearney, S. Merchant, Richard L. Carlin · Inorganic Chemistry · 1973 · 73 citations

Magnetic Properties, Engineering, Chemical Analysis +17

Analytical model for the electric field distribution in SOI RESURF and TMBS structures

S. Merchant · IEEE Transactions on Electron Devices · 1999 · 72 citations

Engineering, Silicon On Insulator, Breakdown Voltage +17

Snapback and safe operating area of LDMOS transistors

P.L. Hower, S. Merchant · 2003 · 54 citations

Device Modeling, Electrical Engineering, Engineering +13