IEEE Transactions on Nuclear Science · 2004 · 23 citations · 22 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsRadiation DosimetrySemiconductor DevicesAbsorbed DoseBipolar Junction TransistorsHigh-dose Radiation EffectsLow-dose Radiation EffectsRadiation HardeningRadiation SensitivityDose-rate EffectsOptimum TemperatureRadiation Damage EffectsRadiation EffectsRadiation Effects On ReliabilityTemperature Dependence Of Radiation DamageTemperature OptimumThermal Effects In Integrated Circuits
The effect of high temperature irradiations has been investigated on four types of commercial linear bipolar integrated circuits (ICs) at eight temperatures ranging from 25/spl deg/C to 150/spl deg/C for different total doses at a given dose rate. In agreement with results obtained for individual bipolar transistors, the results show that an optimum irradiation temperature exists that leads to a maximum amount of degradation. Results are compared to low dose rate (LDR) irradiations for ICs with npn and pnp input transistors.
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Response of advanced bipolar processes to ionizing radiation
E.W. Enlow, R.L. Pease, W.E. Combs et al. · IEEE Transactions on Nuclear Science · 1991 · 322 citations