IEEE Transactions on Nuclear Science · 2009 · 40 citations · 14 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesDevice CharacterizationDevice ModelingDevice ReliabilityDigital Integrated Circuit DesignIntegrated Circuit DesignSemiconductor ReliabilityFully Depleted Silicon-on-insulator TransistorsHigh-temperature Device OperationHigh-temperature ElectronicsPulse Width ParametersSilicon-on-insulator TechnologyTemperature DependenceTemperature Dependence MeasurementTransient Pulse Analysis
Factors that affect single-event transient pulse widths, such as drift, diffusion, and parasitic bipolar transistor parameters, are also strong functions of operating temperature. In this paper, SET pulse-width measurements are performed over a wide temperature range in both bulk and fully-depleted SOI (silicon on insulator) technologies. The average pulse-width increases with temperature for the bulk process, but not for the FDSOI process.
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