Growth of high-quality InGaN/GaN LED structures on (111) Si substrates with internal quantum efficiency exceeding 50%

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma et al. · Nature Materials · 2006 · 682 citations

Semiconductors, Materials Science, Aluminium Nitride +7

Droop in InGaN light-emitting diodes: A differential carrier lifetime analysis

Aurélien David, Michael J. Grundmann · Applied Physics Letters · 2010 · 320 citations

Engineering, Observed Shortening, Light-emitting Diodes +17

Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes

Satoshi Watanabe, Norihide Yamada, Masakazu Nagashima et al. · Applied Physics Letters · 2003 · 289 citations

White Oled, Photonics, Electrical Engineering +12

Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

Qi Dai, M. Schubert, M. H. Kim et al. · Applied Physics Letters · 2009 · 274 citations · Full text

Wide-bandgap Semiconductor, Optical Materials, Engineering +17

Flat GaN epitaxial layers grown on Si(111) by metalorganic vapor phase epitaxy using step-graded AlGaN intermediate layers

Kai Cheng, Maarten Leys, Stefan Degroote et al. · Journal of Electronic Materials · 2006 · 128 citations

Materials Engineering, Materials Science, Electrical Engineering +7