Low Temperature Improvement Method on ${\rm Zn{:}SiO}_{x}$ Resistive Random Access Memory Devices

Abstract

To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) fluid is used as a low temperature treatment. In this letter, the Zn:SiO <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</i> thin films are treated by SCCO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> fluid mixed with pure water. After SCCO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> fluid treatment, the resistive switching qualities of the Zn:SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> thin films are carried out by XPS, fourier transform infrared spectroscopy, and IV measurement. We believe that the SCCO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -treated Zn:SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> thin film is a proresistive switching properties mising material for RRAM applications due to its compatibility with portable flat panel display.