Kai-Huang Chen

Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory

Yi‐Ting Tseng, Tsung‐Ming Tsai, Ting‐Chang Chang et al. · Applied Physics Letters · 2015 · 54 citations · Full text

Non-volatile Memory, Engineering, Current Compliance +16

Resistive Switching Modification by Ultraviolet Illumination in Transparent Electrode Resistive Random Access Memory

Chih-Cheng Shih, Kuan‐Chang Chang, Ting‐Chang Chang et al. · IEEE Electron Device Letters · 2014 · 52 citations

Non-volatile Memory, Electrical Engineering, Zno Rram +12

Resistance Switching Induced by Hydrogen and Oxygen in Diamond-Like Carbon Memristor

Yi‐Jiun Chen, Jen-Chung Lou, Kai-Huang Chen et al. · IEEE Electron Device Letters · 2014 · 50 citations

Engineering, Emerging Memory Technology, Phase Change Memory +20

Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications

Tsung‐Ming Tsai, Kuan‐Chang Chang, Ting‐Chang Chang et al. · IEEE Electron Device Letters · 2012 · 49 citations

Materials Engineering, Materials Science, Electrical Engineering +15

Characteristics of hafnium oxide resistance random access memory with different setting compliance current

Yu‐Ting Su, Kuan‐Chang Chang, Ting‐Chang Chang et al. · Applied Physics Letters · 2013 · 47 citations

Materials Science, Materials Engineering, Electrical Engineering +13