Chih‐Cheng Shih

Physical and chemical mechanisms in oxide-based resistance random access memory

Kuan‐Chang Chang, Ting‐Chang Chang, Tsung‐Ming Tsai et al. · Nanoscale Research Letters · 2015 · 146 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment

Fang-Yuan Yuan, Ning Deng, Chih‐Cheng Shih et al. · Nanoscale Research Letters · 2017 · 75 citations · Full text

Engineering, Materials Engineering, Materials Science +15

Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

Kuan‐Chang Chang, Rui Zhang, Ting‐Chang Chang et al. · IEEE Electron Device Letters · 2013 · 58 citations

Natural Sciences, Materials Science, Physics +17

Complementary Field-Effect Transistor (CFET) Demonstration at 48nm Gate Pitch for Future Logic Technology Scaling

Siyong Liao, T.K. Chiu, Wei-Xiang You et al. · 2023 · 56 citations

Engineering, Electrical Engineering, Microelectronics +14

Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory

Yi‐Ting Tseng, Tsung‐Ming Tsai, Ting‐Chang Chang et al. · Applied Physics Letters · 2015 · 55 citations · Full text

Engineering, Materials Engineering, Materials Science +17