Concepedia

Author

Yi‐Ting Tseng

National Sun Yat-sen University

Also Known As

Tseng, Yi-Ting, Y. M. Tseng, YI-TING TSENG, Yi-Ting Tseng, Yi‐Ting Tseng

58

Publications

750

Citations

17

H-Index

45

Concepts

All Affiliations

National Sun Yat-sen UniversityNational Yang Ming Chiao Tung UniversityNational Cheng Kung UniversityXiamen UniversityTung Fang Design Institute
YT

About

Yi‐Ting Tseng is an author at National Sun Yat-sen University specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

13

16

445

2

Applied Physics

11

12

332

3

Social Sciences

1

1

40

4

Chemical Engineering

1

1

25

5

Chemistry

1

1

25

Yi‐Ting Tseng

×

22

Publications

659

Citations

17

H-Index

YearCitations

Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment

Fang-Yuan Yuan, Ning Deng, Chih‐Cheng Shih,

Nanoscale Research Letters

2017

74

Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO<sub>2</sub>-based RRAM device with a vanadium electrode

Chih-Yang Lin, Po‐Hsun Chen, Ting‐Chang Chang,

Nanoscale

2017

65

Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory

Yi‐Ting Tseng, Tsung‐Ming Tsai, Ting‐Chang Chang,

Applied Physics Letters

2015

54

Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory

Chih‐Yang Lin, Kuan‐Chang Chang, Ting‐Chang Chang,

IEEE Electron Device Letters

2015

48

Forecasting the seasonal pollen index by using a hidden Markov model combining meteorological and biological factors

Yi‐Ting Tseng, Shigeto Kawashima, Satoshi Kobayashi,

The Science of The Total Environment

2019

40

Resistive Switching Mechanism of Oxygen-Rich Indium Tin Oxide Resistance Random Access Memory

Tsung‐Ming Tsai, Kuan‐Chang Chang, Ting‐Chang Chang,

IEEE Electron Device Letters

2016

39

The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based Selector

Chun-Kuei Chen, Chih‐Yang Lin, Po‐Hsun Chen,

IEEE Transactions on Electron Devices

2018

37

Enhanced electrical behavior from the galvanic effect in Ag-Cu alloy electrode conductive bridging resistive switching memory

Yi‐Ting Tseng, I-Chieh Chen, Ting‐Chang Chang,

Applied Physics Letters

2018

34

Resistance Switching Characteristics Induced by O<sub>2</sub> Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory

Po‐Hsun Chen, Ting‐Chang Chang, Kuan‐Chang Chang,

ACS Applied Materials & Interfaces

2017

32

Improvement of Resistive Switching Characteristic in Silicon Oxide-Based RRAM Through Hydride- Oxidation on Indium Tin Oxide Electrode by Supercritical CO&lt;sub&gt;2&lt;/sub&gt; Fluid

Kuan‐Chang Chang, Tsung‐Ming Tsai, Ting‐Chang Chang,

IEEE Electron Device Letters

2015

25

Page 1