Yi‐Ting Tseng

Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment

Fang-Yuan Yuan, Ning Deng, Chih‐Cheng Shih et al. · Nanoscale Research Letters · 2017 · 74 citations · Full text

Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO₂-based RRAM device with a vanadium electrode

Chih-Yang Lin, Po‐Hsun Chen, Ting‐Chang Chang et al. · Nanoscale · 2017 · 65 citations

Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory

Yi‐Ting Tseng, Tsung‐Ming Tsai, Ting‐Chang Chang et al. · Applied Physics Letters · 2015 · 54 citations · Full text

Non-volatile Memory, Engineering, Current Compliance +16

Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory

Chih‐Yang Lin, Kuan‐Chang Chang, Ting‐Chang Chang et al. · IEEE Electron Device Letters · 2015 · 48 citations

Non-volatile Memory, Electrical Engineering, Engineering +11

Forecasting the seasonal pollen index by using a hidden Markov model combining meteorological and biological factors

Yi‐Ting Tseng, Shigeto Kawashima, Satoshi Kobayashi et al. · The Science of The Total Environment · 2019 · 40 citations

Climatology, Meteorology, Numerical Weather Prediction +13