Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

Abstract

In this letter, we report the oxygen accumulation effect and its influence on resistive switching for gadolinium-doped silicon dioxide <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="TeX">$({\rm Gd}{:}{\rm SiO}_{2})$ </tex-math></inline-formula> resistance random access memory (RRAM). We find that oxygen absorbance by indium-tin-oxide electrode affects the conduction current mechanism, and remarkably modifies the device performance of RRAM devices. By current fitting, Schottky emission can be observed in both low and high resistance states, from which conduction model is proposed to clarify the oxygen accumulation phenomenon. Reliability tests, including endurance and high temperature retention are further carried out, evaluating the significance of oxygen accumulation effect in redox reaction for RRAM devices.