Yong-En Syu

Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

Rui Zhang, Tai-Fa Young, Min-Chen Chen et al. · IEEE Electron Device Letters · 2014 · 69 citations

Materials Science, Semiconductors, Electrical Engineering +15

Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory

Kuan‐Chang Chang, Tsung–Ming Tsai, Ting-Chang Chang et al. · IEEE Electron Device Letters · 2014 · 46 citations

Non-volatile Memory, Engineering, Phase Change Memory +17

Investigation for coexistence of dual resistive switching characteristics in DyMn2O5 memory devices

Yu-Ting Tsai, Ting‐Chang Chang, Wei-Li Huang et al. · Applied Physics Letters · 2011 · 46 citations

Non-volatile Memory, Electrical Engineering, Dymn2o5 Memory Devices +9

Silicon introduced effect on resistive switching characteristics of WOX thin films

Yong-En Syu, Ting‐Chang Chang, Tsung–Ming Tsai et al. · Applied Physics Letters · 2012 · 45 citations · Full text

Non-volatile Memory, Engineering, Si Interfusion +16

Hopping effect of hydrogen-doped silicon oxide insert RRAM by supercritical CO₂ fluid treatment

Kuan‐Chang Chang, Tian-Jian Chu, Jianyu Chen et al. · IEEE Electron Device Letters · 2013 · 45 citations

Materials Engineering, Materials Science, Chemical Engineering +15