Tai-Fa Young

Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access Memory

Rui Zhang, Tai-Fa Young, Min-Chen Chen et al. · IEEE Electron Device Letters · 2014 · 69 citations

Engineering, Materials Engineering, Materials Science +17

Silicide formation of Au thin films on (100) Si during annealing

J.F Chang, Tai-Fa Young, Ya‐Liang Yang et al. · Materials Chemistry and Physics · 2003 · 63 citations

Natural Sciences, Materials Engineering, Materials Science +14

Micro-Raman spectroscopy of a single freestanding GaN nanorod grown by molecular beam epitaxy

Ching‐Lien Hsiao, Li-Wei Tu, Tung-Wei Chi et al. · Applied Physics Letters · 2007 · 60 citations

Natural Sciences, Materials Engineering, Materials Science +16

Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

Kuan‐Chang Chang, Rui Zhang, Ting‐Chang Chang et al. · IEEE Electron Device Letters · 2013 · 58 citations

Natural Sciences, Materials Science, Physics +17

Charge Quantity Influence on Resistance Switching Characteristic During Forming Process

Tian-Jian Chu, Ting‐Chang Chang, Tsung‐Ming Tsai et al. · IEEE Electron Device Letters · 2013 · 56 citations

Engineering, Electrical Engineering, Materials Science +17