Tsung–Ming Tsai

Integrated One Diode–One Resistor Architecture in Nanopillar SiO_<i>x</i> Resistive Switching Memory by Nanosphere Lithography

Ji Li, Yao‐Feng Chang, Burt Fowler et al. · Nano Letters · 2013 · 107 citations

Engineering, Integrated Circuits, Nanosphere Lithography +18

Dual Ion Effect of the Lithium Silicate Resistance Random Access Memory

Kuan‐Chang Chang, Tsung–Ming Tsai, Ting-Chang Chang et al. · IEEE Electron Device Letters · 2014 · 46 citations

Non-volatile Memory, Engineering, Phase Change Memory +17

Silicon introduced effect on resistive switching characteristics of WOX thin films

Yong-En Syu, Ting‐Chang Chang, Tsung–Ming Tsai et al. · Applied Physics Letters · 2012 · 45 citations · Full text

Non-volatile Memory, Engineering, Si Interfusion +16

Investigation of on-current degradation behavior induced by surface hydrolysis effect under negative gate bias stress in amorphous InGaZnO thin-film transistors

Kuan-Hsien Liu, Ting‐Chang Chang, Kuan‐Chang Chang et al. · Applied Physics Letters · 2014 · 35 citations

Negative Gate Bias, Surface Hydrolysis Effect, Electrical Engineering +10

RETRACTED: Improvement mechanism of resistance random access memory with supercritical CO2 fluid treatment

Kuan‐Chang Chang, Jung-Hui Chen, Tsung–Ming Tsai et al. · The Journal of Supercritical Fluids · 2013 · 25 citations

Non-volatile Memory, Engineering, Memory Device +4