Chih-Hung Pan

Physical and chemical mechanisms in oxide-based resistance random access memory

Kuan‐Chang Chang, Ting‐Chang Chang, Tsung‐Ming Tsai et al. · Nanoscale Research Letters · 2015 · 146 citations · Full text

Engineering, Materials Engineering, Materials Science +16

Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO₂-based RRAM device with a vanadium electrode

Chih-Yang Lin, Po‐Hsun Chen, Ting‐Chang Chang et al. · Nanoscale · 2017 · 65 citations

Engineering, Materials Engineering, Materials Science +17

Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices

Kuan‐Chang Chang, Rui Zhang, Ting‐Chang Chang et al. · IEEE Electron Device Letters · 2013 · 58 citations

Natural Sciences, Materials Science, Physics +17

Bulk Oxygen–Ion Storage in Indium–Tin–Oxide Electrode for Improved Performance of HfO₂-Based Resistive Random Access Memory

Po‐Hsun Chen, Kuan‐Chang Chang, Ting‐Chang Chang et al. · IEEE Electron Device Letters · 2016 · 56 citations

Engineering, Materials Engineering, Materials Science +17

Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access Memory

Chih‐Yang Lin, Kuan‐Chang Chang, Ting‐Chang Chang et al. · IEEE Electron Device Letters · 2015 · 48 citations

Engineering, Materials Engineering, Materials Science +17