A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluid

Abstract

A low-temperature method, supercritical CO2 (SCCO2) fluid technology, is employed to improve the device properties of ZnO TFT at 150 °C. In this work, the undoped ZnO films were deposited by sputter at room temperature and treated by SCCO2 fluid which is mixed with 5 ml pure H2O. After SCCO2 treatment, the on/off current ratios and threshold voltage of the device were improved significantly. From x-ray photoelectron spectroscopy analyses, the enhancements were attributed to the stronger Zn–O bonds, the hydrogen-related donors, and the reduction in dangling bonds at the grain boundary by OH passivation.