Optical and structural investigation of ZnO thin films prepared by chemical vapor deposition (CVD)

Abstract

Transparent and conductive ZnO thin films have been prepared by a method derived from chemical vapor deposition using Zn (C5H7O2)2 as Zn source. The deposited thin ZnO layers of ∼0.1 μm thickness on Si and InP semiconductor substrates, have been investigated with respect to the crystalline phase by X-ray diffraction (XRD), and surface morphology by atomic force microscopy (AFM). Spectrophotometric measurements in the ultraviolet-visible-near infrared spectral range and optoelectrical measurements of ZnO/semiconductor heterostructures have been performed.