Electrical Properties of Focused-Ion-Beam Boron-Implanted Silicon

Abstract

Electrical properties of 16 keV, focused-ion-beam (FIB) (beam diameter: 1 µm, current density: 50 mA/cm 2 ) boron-implanted silicon layers have been investigated as a function of beam scan speed and ion dose, and compared with those obtained by conventional implantation (current density: 0.4 µA/cm 2 ). High electrical activation of the FIB implanted layers is obtained by annealing below 800°C as a result of the increase in amorphous zones created in the implanted layers. Amorphous zone overlapping is assumed to occur at FIB implantation doses of 3–4×10 15 ions/cm 2 from the results of electrical activation and the carrier profile of implanted regions annealed at low temperature, if beam scan speed is lowered to about 10 -2 cm/s.