Yasuo Bamba

GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter

Akira Takamori, Eizo Miyauchi, Hiroshi Arimoto et al. · Japanese Journal of Applied Physics · 1984 · 47 citations

Electrical Engineering, Gaas Growth, Mbe Grown Gaas +15

Maskless ion beam writing of precise doping patterns with Be and Si for molecular beam epitaxially grown multilayer GaAs

Eizo Miyauchi, Tetsuo Morita, Akira Takamori et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1986 · 45 citations

Engineering, Ion Beam Instrumentation, Integrated Circuits +18

SIMS Study of Compositional Disordering in Si Ion Implanted AlGaAs–GaAs Superlattice

Junji Kobayashi, Masato Nakajima, Yasuo Bamba et al. · Japanese Journal of Applied Physics · 1986 · 40 citations

Materials Science, Semiconductors, Semiconductor Technology +13

Focused Si Ion Implantation in GaAs

Yasuo Bamba, Eizo Miyauchi, Hiroshi Arimoto et al. · Japanese Journal of Applied Physics · 1983 · 33 citations

Semiconductors, Electrical Engineering, Ion Implantation +11

Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium Arsenide

Akira Takamori, Eizo Miyauchi, Hiroshi Arimoto et al. · Japanese Journal of Applied Physics · 1985 · 33 citations

Materials Science, Materials Engineering, Electrical Engineering +12