Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium Arsenide

Abstract

Growth-interrupted interfaces in Molecular Beam Epitaxy (MBE) have been characterized by C-V measurements and secondary ion mass spectroscopy. Carriers were depleted around the interfaces depending on interruption conditions such as the background vacuum and the interrupted period. For the depleted samples, carbon was detected at the interfaces. This carbon contaminant deteriorated crystal quality at the interface and caused carrier depletion. Using the MBE system combined with a maskless ion implanter in ultrahigh vacuum (UHV), a selectively Si-implanted GaAs multilayer structure was grown without interface degradation.