Cleaning of MBE GaAs Substrates by Hydrogen Radical Beam Irradiation

Akira Takamori, Sumio Sugata, Kiyoshi Asakawa, +2

Japanese Journal of Applied Physics

Electrical EngineeringChemical EngineeringEngineeringMbe Gaas SubstratesNanoelectronics +11

Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE

S. Hiyamizu, Takashi Mimura, Toshio Fujii, +2

Japanese Journal of Applied Physics

Two-dimensional Electron GasElectrical EngineeringHeterojunction MaterialEngineeringPhysics +10

The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE

S. Hiyamizu, Toshio Fujii, Takashi Mimura, +3

Japanese Journal of Applied Physics

Materials ScienceSemiconductorsOxide HeterostructuresTwo-dimensional Electron GasGrowth Temperature +13

GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter

Akira Takamori, Eizo Miyauchi, Hiroshi Arimoto, +2

Japanese Journal of Applied Physics

Electrical EngineeringGaas GrowthMbe Grown GaasEngineeringUltrahigh Vacuum +13

Maskless ion beam writing of precise doping patterns with Be and Si for molecular beam epitaxially grown multilayer GaAs

Eizo Miyauchi, Tetsuo Morita, Akira Takamori, +3

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

EngineeringIon Beam InstrumentationIntegrated CircuitsIon ImplantationIon Beam +16

Selective Si and Be implantation in GaAs using a 100 kV mass-separating focused ion beam system with an Au–Si–Be liquid metal ion source

Eizo Miyauchi, Hiroshi Arimoto, Hisao Hashimoto, +1

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena

Selective SiElectrical EngineeringIon ImplantationEngineeringWidth Implantation +11

Room-Temperature Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures

S. Hiyamizu, Kazuo Nanbu, Takashi Mimura, +2

Japanese Journal of Applied Physics

SemiconductorsTwo-dimensional Electron GasElectrical EngineeringConventional Gaas FetsEngineering +9

Focused Si Ion Implantation in GaAs

Yasuo Bamba, Eizo Miyauchi, Hiroshi Arimoto, +3

Japanese Journal of Applied Physics

SemiconductorsElectrical EngineeringIon ImplantationEngineeringApplied Physics +9

Arsenic Pressure Dependence of Interdiffusion of AlGaAs/GaAs Interface in Quantum Well

Akira Furuya, Osamu Wada, Akira Takamori, +1

Japanese Journal of Applied Physics

Wide-bandgap SemiconductorOptical MaterialsEngineeringAlgaas/gaas InterfaceQuantum Well +14

Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium Arsenide

Akira Takamori, Eizo Miyauchi, Hiroshi Arimoto, +3

Japanese Journal of Applied Physics

Materials ScienceMaterials EngineeringElectrical EngineeringEpitaxial GrowthEngineering +10