Hisao Hashimoto

Cleaning of MBE GaAs Substrates by Hydrogen Radical Beam Irradiation

Akira Takamori, Sumio Sugata, Kiyoshi Asakawa et al. · Japanese Journal of Applied Physics · 1987 · 84 citations

Electrical Engineering, Chemical Engineering, Engineering +13

Extremely High Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterojunction Structures Grown by MBE

S. Hiyamizu, Takashi Mimura, Toshio Fujii et al. · Japanese Journal of Applied Physics · 1981 · 50 citations

Two-dimensional Electron Gas, Electrical Engineering, Heterojunction Material +12

The Effect of Growth Temperature on the Mobility of Two-Dimensional Electron Gas in Selectively Doped GaAs/N-AlGaAs Heterostructures Grown by MBE

S. Hiyamizu, Toshio Fujii, Takashi Mimura et al. · Japanese Journal of Applied Physics · 1981 · 50 citations

Materials Science, Semiconductors, Oxide Heterostructures +15

GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter

Akira Takamori, Eizo Miyauchi, Hiroshi Arimoto et al. · Japanese Journal of Applied Physics · 1984 · 47 citations

Electrical Engineering, Gaas Growth, Mbe Grown Gaas +15

Maskless ion beam writing of precise doping patterns with Be and Si for molecular beam epitaxially grown multilayer GaAs

Eizo Miyauchi, Tetsuo Morita, Akira Takamori et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1986 · 45 citations

Engineering, Ion Beam Instrumentation, Integrated Circuits +18