Hiroshi Arimoto

GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter

Akira Takamori, Eizo Miyauchi, Hiroshi Arimoto et al. · Japanese Journal of Applied Physics · 1984 · 47 citations

Electrical Engineering, Gaas Growth, Mbe Grown Gaas +15

Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography

Morimi Osawa, Kimitoshi Takahashi, Masami Sato et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2001 · 45 citations

Pattern Densities, Electrical Engineering, Engineering +12

Maskless ion beam writing of precise doping patterns with Be and Si for molecular beam epitaxially grown multilayer GaAs

Eizo Miyauchi, Tetsuo Morita, Akira Takamori et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1986 · 45 citations

Engineering, Ion Beam Instrumentation, Integrated Circuits +18

Selective Si and Be implantation in GaAs using a 100 kV mass-separating focused ion beam system with an Au–Si–Be liquid metal ion source

Eizo Miyauchi, Hiroshi Arimoto, Hisao Hashimoto et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1983 · 41 citations

Selective Si, Electrical Engineering, Ion Implantation +13

Direct Evaluation of Gate Line Edge Roughness Impact on Extension Profiles in Sub-50-nm n-MOSFETs

H. Fukutome, Y. Momiyama, T. Kubo et al. · IEEE Transactions on Electron Devices · 2006 · 41 citations

Electrical Engineering, Impurity Diffusion, Engineering +13