Hiroshi Arimoto - Concepedia

Author

Hiroshi Arimoto

Fujitsu (Japan)

Also Known As

Arimoto, H., H. ARIMOTO, H. Arimoto, HIROSHI ARIMOTO, Hiroshi ARIMOTO, Hiroshi Arimoto, Hiroshi Arimoto Hiroshi Arimoto

159

Publications

Citations

H-Index

Concepts

All Affiliations

Fujitsu (Japan)The University of Osaka

About

Hiroshi Arimoto is an author at Fujitsu (Japan) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	31	685
2	Applied Physics	16	29	635
3	Natural Sciences	2	2	21
4	Education	1	1	17
5	Medicine	1	1	17

Hiroshi Arimoto

Publications

713

Citations

H-Index

Page 1

	Year	Citations
GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter Akira Takamori, Eizo Miyauchi, Hiroshi Arimoto, Japanese Journal of Applied Physics Electrical EngineeringGaas GrowthMbe Grown GaasEngineeringUltrahigh Vacuum	1984	47
Proximity effect correction using pattern shape modification and area density map for electron-beam projection lithography Morimi Osawa, Kimitoshi Takahashi, Masami Sato, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Pattern DensitiesElectrical EngineeringEngineeringProximity Effect CorrectionElectron-beam Projection Lithography	2001	45
Maskless ion beam writing of precise doping patterns with Be and Si for molecular beam epitaxially grown multilayer GaAs Eizo Miyauchi, Tetsuo Morita, Akira Takamori, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena EngineeringIon Beam InstrumentationIntegrated CircuitsIon ImplantationIon Beam	1986	45
Selective Si and Be implantation in GaAs using a 100 kV mass-separating focused ion beam system with an Au–Si–Be liquid metal ion source Eizo Miyauchi, Hiroshi Arimoto, Hisao Hashimoto, Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena Selective SiElectrical EngineeringIon ImplantationEngineeringWidth Implantation	1983	41
Direct Evaluation of Gate Line Edge Roughness Impact on Extension Profiles in Sub-50-nm n-MOSFETs H. Fukutome, Y. Momiyama, T. Kubo, IEEE Transactions on Electron Devices Electrical EngineeringImpurity DiffusionEngineeringTunneling MicroscopyNanoelectronics	2006	41
Manganese Oxide-Surface Modified Titanium (IV) Dioxide as Environmental Catalyst Qiliang Jin, Hiroshi Arimoto, Musashi Fujishima, Catalysts EngineeringInorganic PhotochemistryGreen ChemistryNanocatalysisChemistry	2013	40
Focused Si Ion Implantation in GaAs Yasuo Bamba, Eizo Miyauchi, Hiroshi Arimoto, Japanese Journal of Applied Physics SemiconductorsElectrical EngineeringIon ImplantationEngineeringApplied Physics	1983	33
Growth-Interrupted Interfaces in Multilayer MBE Growth of Gallium Arsenide Akira Takamori, Eizo Miyauchi, Hiroshi Arimoto, Japanese Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringEpitaxial GrowthEngineering	1985	33
Charge build-up in Si-processing plasma caused by electron shading effect Takeshi Kamata, Hiroshi Arimoto Journal of Applied Physics Ion CurrentsElectrical EngineeringEngineeringPhysicsPlasma Processing	1996	30
A 100 kV Maskless Ion-Implantation System with an Au–Si–Be Liquid Metal Ion Source for III-V Compound Semiconductors Eizo Miyauchi, Hiroshi Arimoto, Hisao Hashimoto, Japanese Journal of Applied Physics Materials ScienceElectrical EngineeringIon ImplantationEngineeringPhysics	1983	28

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