GaAs Growth Using an MBE System Connected with a 100 kV UHV Maskless Ion Implanter

Abstract

A new molecular beam epitaxy (MBE) system coupled with a 100 kV maskless ion implanter via an ultrahigh vacuum (UHV) sample transfer module was constructed. This system can grow epitaxial layers with ion beam pattern-implantation without exposing a sample surface to the outer atmosphere. Buried Be implanted layers in MBE grown GaAs were fabricated using this apparatus. Because of the contamination-free UHV growth process, the photoluminescent intensity depth profile of the grown crystal showed no degradation at the interface where the MBE growth was interrupted for the ion implantation process.