H. Fukutome

Si FinFET based 10nm technology with multi Vt gate stack for low power and high performance applications

H.-J. Cho, Hwan Sool Oh, Kyunghoon Nam et al. · 2016 · 73 citations

Engineering, Computer Engineering, Electrical Engineering +17

Direct Evaluation of Gate Line Edge Roughness Impact on Extension Profiles in Sub-50-nm n-MOSFETs

H. Fukutome, Y. Momiyama, T. Kubo et al. · IEEE Transactions on Electron Devices · 2006 · 41 citations

Engineering, Electrical Engineering, Materials Science +17

Scanning tunneling microscopy study of the hydrogen-terminated n- and p-type Si(001) surfaces

H. Fukutome, Keizo Takano, Haruyuki Yasuda et al. · Applied Surface Science · 1998 · 20 citations

Natural Sciences, Materials Engineering, Materials Science +13

Two-dimensional characterization of carrier concentration in metal-oxide-semiconductor field-effect transistors with the use of scanning tunneling microscopy

H. Fukutome, Hiroshi Arimoto, Shigehiko Hasegawa et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2004 · 17 citations

Engineering, Electrical Engineering, Materials Science +17

Suppression of Poly-Gate-Induced Fluctuations in Carrier Profiles of Sub-50nm MOSFETs

H. Fukutome, Y. Momiyama, T. Kubo et al. · 2006 · 15 citations

Engineering, Electrical Engineering, Materials Science +16