Scanning tunneling microscopy study of the hydrogen-terminated n- and p-type Si(001) surfaces

Neutralization of Shallow Acceptor Levels in Silicon by Atomic Hydrogen

J. I. Pánkové, David Carlson, J. E. Berkeyheiser et al. · Physical Review Letters · 1983 · 455 citations

Natural Sciences, Materials Science, Physics +10

Tunneling spectroscopy of the GaAs(110) surface

R. M. Feenstra, Joseph A. Stroscio · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1987 · 421 citations

Natural Sciences, Materials Engineering, Materials Science +17

Deactivation of the boron acceptor in silicon by hydrogen

Chih‐Tang Sah, Jack Yuan-Chen Sun, Joseph Jeng-Tao Tzou · Applied Physics Letters · 1983 · 320 citations

Engineering, Electrical Engineering, Materials Science +17

Ideal hydrogen termination of Si(001) surface by wet-chemical preparation

Yukinori Morita, Hiroshi Tokumoto · Applied Physics Letters · 1995 · 93 citations

Natural Sciences, Materials Engineering, Materials Science +17

Wet chemical etching of Si(100) surfaces in concentrated NH4F solution: formation of (2 × 1)H reconstructed Si(100) terraces versus (111) facetting

U. Neuwald, Harald Hessel, A. Feltz et al. · Surface Science · 1993 · 66 citations

Natural Sciences, Materials Engineering, Materials Science +16