Suppression of Poly-Gate-Induced Fluctuations in Carrier Profiles of Sub-50nm MOSFETs

Abstract

We have investigated what effects randomly oriented and rotated poly-Si gate grains have on lateral carrier profiles in sub-50-nm MOSFETs by direct observations and electrical measurements. Since amorphous gates suppress random channeling penetration of pocket implants, we have increased effective mobility (40%), improved V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th </sub> roll-off characteristic (7 nm) and decreased V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> fluctuation (-26%)