Focused Si Ion Implantation in GaAs

Abstract

A 160-keV, submicron-focused Si ion implantation in MBE-GaAs was made using a 100 kV maskless implanter with a Au–Si–Be alloy ion source. Obtained Raman spectra indicated that compared with the implantation current densities of an unfocused ion beam, the higher current density (about 10 4 times greater) of the focused beam resulted in less implantation-induced and residual (after annealing up to 500°C) damage. Moreover, 850°C annealing led to a higher electrical activity of focused implanted Si-ions but almost the same optical quality of conventional implantation.