High current density Ga+ implantations into Si

Abstract

The lattice disorder produced in Si by a 59-keV Ga+ ion beam focused to a diameter of 1200 Å and having a current density of 1.2 A/cm2 was compared to that produced by broad area implantations of 59-keV Ga+ at a current density of 0.4 μA/cm2. Based on 140-keV proton backscattering, the disorder produced at the high-dose rate was found to be comparable although deeper than that produced by the low-dose-rate implantations. The depth profile of Ga implanted at 1.2 A/cm2 to a dose of 1.5×1015/cm2 was determined by 280-keV He++ backscattering to be basically consistent with projected range calculations.