R. R. Hart

Disorder produced in SiC by ion bombardment

R. R. Hart, H. L. Dunlap, O. J. Marsh · Radiation Effects · 1971 · 84 citations

Materials Engineering, Materials Science, Ion Implantation +14

Alloying of thin palladium films with single crystal and amorphous silicon

D. H. Lee, R. R. Hart, D. A. Kiewit et al. · physica status solidi (a) · 1973 · 50 citations

Engineering, Thin Film Process Technology, Chemistry +17

TEMPERATURE DEPENDENCE OF LATTICE DISORDER CREATED IN Si BY 40 keV Sb IONS

S. T. Picraux, J.E. Westmoreland, J. W. Mayer et al. · Applied Physics Letters · 1969 · 48 citations

Materials Science, Implant Temperature, Ion Implantation +14

Ion-induced migration of Cu into Si

R. R. Hart, H. L. Dunlap, O. J. Marsh · Journal of Applied Physics · 1975 · 40 citations

Materials Science, Cu-contaminated Si, Ion Implantation +13

LATTICE DISORDER PRODUCED IN Si BY 40-keV BORON AND ITS EFFECT ON ELECTRICAL BEHAVIOR

R. R. Hart, O. J. Marsh · Applied Physics Letters · 1969 · 36 citations

Materials Science, Electrical Engineering, Ion Implantation +15