TEMPERATURE DEPENDENCE OF LATTICE DISORDER CREATED IN Si BY 40 keV Sb IONS

Abstract

The temperature dependence of lattice disorder created in Si by 40-keV Sb ions was studied by energy analysis of the yield of backscattered 1-MeV He ions incident along 〈111〉 and 〈110〉 axes. Doses of ∼ 1 × 1013 Sb ions/cm2 were used so that the disorder level was below that representing an amorphous layer. The disorder per incident ion decreases strongly with implant temperature above 50°C. This is approximately 100°C lower than the region of corresponding decrease in the anneal of a low-dose room-temperature implantation. For implantation temperatures less than 50°C, the disorder per ion was only mildly temperature-dependent.