J.E. Westmoreland

Analysis of disorder distributions in boron implanted silicon

J.E. Westmoreland, J. W. Mayer, F. H. Eisen et al. · Radiation Effects · 1970 · 94 citations

Engineering, Ion Beam Instrumentation, Silicon On Insulator +16

Dose rate effects in nickel-ion-irradiated nickel

J.E. Westmoreland, J.A. Sprague, F.A. Smidt et al. · Radiation Effects · 1975 · 71 citations

Engineering, Radiation Materials Science, Radiation Effect +19

Correlation functions in the theory of atomic collision cascades: Ion location and the distribution in depth and size of damage clusters

J.E. Westmoreland, Peter Sigmund · Radiation Effects · 1970 · 69 citations

Ion Implantation, Engineering, Physics +14

PRODUCTION AND ANNEALING OF LATTICE DISORDER IN SILICON BY 200-keV BORON IONS

J.E. Westmoreland, J. W. Mayer, F. H. Eisen et al. · Applied Physics Letters · 1969 · 53 citations

Materials Science, Semiconductors, Ion Implantation +14

TEMPERATURE DEPENDENCE OF LATTICE DISORDER CREATED IN Si BY 40 keV Sb IONS

S. T. Picraux, J.E. Westmoreland, J. W. Mayer et al. · Applied Physics Letters · 1969 · 48 citations

Materials Science, Implant Temperature, Ion Implantation +14