O. J. Marsh - Concepedia

Author

O. J. Marsh

HRL Laboratories (United States)

Also Known As

O. J. Marsh, O. Marsh, O.J. MARSH, O.J. Marsh, OGDEN J. MARSH, Ogden J. Marsh, Olivia Marsh

Publications

3.4K

Citations

H-Index

Concepts

All Affiliations

HRL Laboratories (United States)California Institute of Technology

About

O. J. Marsh is an author at HRL Laboratories (United States) specializing in applied physics, engineering, and crystalline defects.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	26	47	1.9K
2	Applied Physics	26	45	1.8K
3	Natural Sciences	7	7	289
4	Chemistry	7	7	493
5	Chemical Engineering	1	1	78

O. J. Marsh

Publications

1.9K

Citations

H-Index

Page 1

	Year	Citations
Electrical Behavior of Group III and V Implanted Dopants in Silicon R. Baron, G. A. Shifrin, O. J. Marsh, Journal of Applied Physics Column IiiV Implanted DopantsEngineeringGroup IiiIntegrated Circuits	1969	155
Stability of cerium oxide on silicon studied by x-ray photoelectron spectroscopy Edward Preisler, O. J. Marsh, Robin Beach, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena EngineeringIntegrated CircuitsChemistryVacuum DeviceSilicon On Insulator	2001	135
ION IMPLANTATION OF SILICON: II. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTS J. W. Mayer, O. J. Marsh, G. A. Shifrin, Canadian Journal of Physics Materials ScienceSemiconductorsElectrical EngineeringThermal Equilibrium SolubilityEngineering	1967	117
Disorder produced in SiC by ion bombardment R. R. Hart, H. L. Dunlap, O. J. Marsh Radiation Effects Materials EngineeringMaterials ScienceIon ImplantationEngineeringPhysics	1971	84
Technique used in Hall effect analysis of ion implanted Si and Ge Nils Gunnar Johansson, J. W. Mayer, O. J. Marsh Solid-State Electronics Electrical EngineeringIon ImplantationEngineeringApplied PhysicsSilicon On Insulator	1970	81
Carbon in semi-insulating, liquid encapsulated Czochralski GaAs A. T. Hunter, Hiroshi Kimura, J. P. Baukus, Applied Physics Letters SemiconductorsPpm H2oChemical EngineeringElectronic DevicesEngineering	1984	78
A new acceptor level in indium-doped silicon R. Baron, M. H. Young, J. K. Neeland, Applied Physics Letters EngineeringOptoelectronic DevicesChemistrySilicon On InsulatorSemiconductors	1977	69
Fluorescence of Europium Thenoyltrifluoroacetonate. I. Evaluation of Laser Threshold Parameters Herb A. Winston, O. J. Marsh, C. Suzuki, The Journal of Chemical Physics Optical MaterialsEngineeringLaser ApplicationsChemistryLuminescence Property	1963	60
Nature of the 0.111-eV acceptor level in indium-doped silicon R. Baron, J. P. Baukus, S. Allen, Applied Physics Letters SemiconductorsSemiconductor TechnologyX-level DefectEngineeringPhysics	1979	57
Epitaxial silicon grown on CeO2/Si(111) structure by molecular beam epitaxy J. T. Jones, E. T. Croke, C. M. Garland, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceSemiconductorsMaterials EngineeringEpitaxial GrowthEngineering	1998	52

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