S. Shukuri - Concepedia

Author

S. Shukuri

Hitachi (Japan)

Also Known As

S. SHUKURI, S. Shukuri, Shoji SHUKURI, Shoji Shukuri, Shoji Shukuri Shoji Shukuri

Publications

805

Citations

H-Index

Concepts

All Affiliations

Hitachi (Japan)Indian Institute of Technology Bombay Arizona State University

About

S. Shukuri is an author at Hitachi (Japan) specializing in engineering, electrical engineering, and microelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	21	539
2	Electrical Engineering	15	19	477
3	Computer Engineering	12	15	378
4	Applied Physics	9	9	250
5	Computer Science	2	2	46

S. Shukuri

Publications

579

Citations

H-Index

Page 1

	Year	Citations
Future BiCMOS technology for scaled supply voltage Atsuo Watanabe, T. Nagano, S. Shukuri, Low-power ElectronicsElectrical EngineeringEngineeringHigh-speed ElectronicsCircuit System	2003	58
CHISEL flash EEPROM. I. Performance and scaling Souvik Mahapatra, S. Shukuri, J. Bude IEEE Transactions on Electron Devices	2002	40
256-Mb DRAM circuit technologies for file applications G. Kitsukawa, Masashi Horiguchi, Y. Kawajiri, IEEE Journal of Solid-State Circuits Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureExperimental 256-Mb Dram	1993	39
CHISEL flash EEPROM. II. Reliability Souvik Mahapatra, S. Shukuri, J. Bude IEEE Transactions on Electron Devices Non-volatile MemoryEngineeringEmerging Memory TechnologyComputer ArchitectureSingle Cells	2002	37
Focused ion beam gallium implantation into silicon M. Tamura, S. Shukuri, Masahiro Moniwa, Applied Physics A Ion ImplantationEngineeringApplied PhysicsIon BeamOptoelectronics	1986	36
A BiCMOS logic gate with positive feedback Yoshifumi Nishio, F. Murabayashi, S. Kotoku, Low-power ElectronicsElectrical EngineeringBicmos Process TechnologyQuantum ComputingHigh-speed Electronics	2003	35
Electrical Properties of Focused-Ion-Beam Boron-Implanted Silicon M. Tamura, S. Shukuri, S. Tachi, Japanese Journal of Applied Physics Materials ScienceBeam DiameterElectrical EngineeringIon ImplantationEngineering	1983	34
A multigigabit DRAM technology with 6F/sup 2/ open-bitline cell, distributed overdriven sensing, and stacked-flash fuse Tsuyoshi Takahashi, Tomonori Sekiguchi, R. Takemura, IEEE Journal of Solid-State Circuits Non-volatile MemoryElectrical EngineeringChip-scale PackageEngineeringAdvanced Packaging (Semiconductors)	2001	31
Drain disturb during CHISEL programming of NOR flash EEPROMs-physical mechanisms and impact of technological parameters Deleep R. Nair, Souvik Mahapatra, S. Shukuri, IEEE Transactions on Electron Devices Materials EngineeringDevice ModelingElectrical EngineeringSemiconductor DeviceEngineering	2004	28
256 Mb DRAM technologies for file applications G. Kitsukawa, Masashi Horiguchi, Y. Kawaijiri, Non-volatile MemoryElectrical EngineeringEngineeringEmerging Memory TechnologyComputer Engineering	1993	27

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