Two Cryogenic Processes Involving SF[sub 6], O[sub 2], and SiF[sub 4] for Silicon Deep Etching

The black silicon method II:The effect of mask material and loading on the reactive ion etching of deep silicon trenches

Henri Jansen, M. de Boer, Johannes Faas Burger et al. · Microelectronic Engineering · 1995 · 150 citations · Full text

Engineering, Materials Engineering, Materials Science +15

Passivation mechanisms in cryogenic SF₆/O₂etching process

Rémi Dussart, Mohamed Boufnichel, G. Marcos et al. · Journal of Micromechanics and Microengineering · 2003 · 106 citations

Engineering, Materials Engineering, Materials Science +17

Si O x F y passivation layer in silicon cryoetching

X. Mellhaoui, Rémi Dussart, Thomas Tillocher et al. · Journal of Applied Physics · 2005 · 97 citations

Engineering, Materials Engineering, Materials Science +17

The black silicon method. VIII. A study of the performance of etching silicon using SF6/O2-based chemistry with cryogenical wafer cooling and a high density ICP source

Henri Jansen, M. de Boer, H. Wensink et al. · Microelectronics Journal · 2001 · 92 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Silicon columnar microstructures induced by an SF₆/O₂plasma

Rémi Dussart, X. Mellhaoui, Thomas Tillocher et al. · Journal of Physics D Applied Physics · 2005 · 89 citations

Natural Sciences, Materials Science, Physics +17