IEEE Transactions on Device and Materials Reliability · 2004 · 45 citations · 9 references
EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesCmos Circuit DesignDevice CharacterizationDevice ReliabilityIntegrated Circuit DesignRadio-frequency Integrated CircuitsSemiconductor ReliabilityCmos Radio-frequency CircuitsCmos ReliabilityDevice DegradationHot Carrier EffectsHot Carrier InjectionHot-carrier DegradationStress MeasurementVoltage-controlled Oscillators
Hot carrier and soft breakdown effects are evaluated experimentally. A methodology to systematically study hot carrier and soft breakdown effects on RF circuits is developed. Device stress measurement and SpectreRF simulation are conducted to evaluate the impact of hot carrier and soft breakdown effects on RF circuits such as low-noise amplifier and voltage-controlled oscillator performances. Two design techniques to build reliable RF circuits are proposed.
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Ultra-thin gate dielectrics: they break down, but do they fail?
B. E. Weir, P. J. Silvėrman, D. Monroe et al. · 2002 · 205 citations