Proceedings of the ... Bipolar/BiCMOS Circuits and Technology Meeting/Proceedings of the ... BipolarBiCMOS Circuits and Technology Meeting · 2006 · 11 citations · 19 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCompound SemiconductorsHigh-frequency Semiconductor DevicesIii-v SemiconductorsIntegrated Circuit DesignIntegrated Circuit DevicesRadio-frequency Integrated CircuitsActive Device CharacterizationCmos Radio-frequency CircuitsCommunication ElectronicsComplementary Metal-oxide-semiconductor DevicesIntegrated Passive DevicesRadio-frequency DevicesRadio-frequency Integrated Circuit DesignRf Cmos Design
The International Technology Roadmap for Semiconductor (ITRS) Radio Frequency and Analog/Mixed-Signal (RF and AMS) Wireless Technology Working Group (TWG) addresses device technologies for wireless communications covering both silicon and III-V compound semiconductors. This paper discussed the roadmap and the figures of merit (FoM) used to characterize both active and passive devices critical for typical radio front end designs. The trends, challenges and potential solutions was reviewed and address the intersection of silicon and III-V compound semiconductors
19
Design considerations for 60 GHz CMOS radios
C.H. Doan, Sohrab Emami, David A. Sobel et al. · IEEE Communications Magazine · 2004 · 326 citations
Engineering, Computer Engineering, Electrical Engineering +17
A silicon 60GHz receiver and transmitter chipset for broadband communications
Brian Floyd, Scott Reynolds, U. Pfeifer et al. · 2006 · 273 citations
SiGe bipolar technology for automotive radar applications
J. Böck, Hans‐Wilhelm Schiffer, K. Auflnger et al. · 2004 · 164 citations
Engineering, Automotive Engineering, Electrical Engineering +14