M. Racanelli

Device and Technology Evolution for Si-Based RF Integrated Circuits

Herbert S. Bennett, Ralf Brederlow, Júlio Costa et al. · IEEE Transactions on Electron Devices · 2005 · 124 citations

Device Feature Size, Electrical Engineering, Engineering +15

Ultra high speed SiGe NPN for advanced BiCMOS technology

M. Racanelli, K. Schuegraf, A. Kalburge et al. · 2002 · 75 citations

Thick Cu, Electrical Engineering, Engineering +12

SiGe BiCMOS Technology for RF Circuit Applications

M. Racanelli, Patrick Kempf · IEEE Transactions on Electron Devices · 2005 · 62 citations

Electrical Engineering, Engineering, Rf Semiconductor +13

Analysis of floating body induced transient behaviors in partially depleted thin film SOI devices

H.C. Shin, Ik-Sung Lim, M. Racanelli et al. · IEEE Transactions on Electron Devices · 1996 · 56 citations

Device Modeling, Materials Engineering, Electrical Engineering +15

Temperature dependence of growth of Ge<i>x</i>Si1−<i>x</i> by ultrahigh vacuum chemical vapor deposition

M. Racanelli, D. W. Greve · Applied Physics Letters · 1990 · 55 citations

Materials Science, Materials Engineering, Engineering +13